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High-temperature annealing is a promising but still mainly unexplored method for enhancing spin properties of negatively charged nitrogen-vacancy (NV) centers in diamond particles. After high-energy irradiation, the formation of NV centers in diamond particles is typically accomplished via annealing at temperatures in the range of 800–900 °C for 1–2 h to promote vacancy diffusion. Here, we investigate the effects of conventional annealing (900 °C for 2 h) against annealing at a much higher temperature of 1600 °C for the same annealing duration for particles ranging in size from 100 nm to 15 μm using electron paramagnetic resonance and optical characterization. At this high temperature, the vacancy-assisted diffusion of nitrogen can occur. Previously, the annealing of diamond particles at this temperature was performed over short time scales because of concerns of particle graphitization. Our results demonstrate that particles that survive this prolonged 1600 °C annealing show increased NV T1 and T2 electron spin relaxation times in 1 and 15 μm particles, due to the removal of fast relaxing spins. Additionally, this high-temperature annealing also boosts magnetically induced fluorescence contrast of NV centers for particle sizes ranging from 100 nm to 15 μm. At the same time, the content of NV centers is decreased fewfold and reaches a level of <0.5 ppm. The results provide guidance for future studies and the optimization of high-temperature annealing of fluorescent diamond particles for applications relying on the spin properties of NV centers in the host crystals. 

Abstract Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies. 

Abstract Two‐dimentional magnets are of significant interest both as a platform for exploring novel fundamental physics and for their potential in spintronic and optoelectronic devices. Recent bulk magnetometry studies have indicated a weak ferromagnetic response in tungsten disulfide (WS₂), and theoretical predictions suggest edge‐localized magnetization in flakes with partial hydrogenation. Here, room‐temperature wide‐field quantum diamond magnetometry to image pristine and Fe‐implanted WS₂flakes of varying thicknesses (45–160 nm), exfoliated from bulk crystals and transferred to NV‐doped diamond substrates, is used. Direct evidence of edge‐localized stray magnetic fields, which scale linearly with applied external magnetic field (4.4–220 mT), reaching up to ±4.7 µT, is observed. The edge signal shows a limited dependence on the flake thickness, consistent with dipolar field decay and sensing geometry. Magnetic simulations using five alternative models favor the presence of edge magnetization aligned along an axis slightly tilted from the normal to the WS₂flake's plane, consistent with spin canting in antiferromagnetically coupled edge states. Thses findings establish WS₂as a promising platform for edge‐controlled 2D spintronics.